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Magnetization Reversal via Domain Wall Motion in Vertical High-Aspect-Ratio Nanopillar with Two Magnetic Junctions
http://hdl.handle.net/10112/0002001571
http://hdl.handle.net/10112/0002001571b8ce3e8e-bf1a-46bc-9a83-bbb2b99fb5a7
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
KU-1100-20240201-02.pdf (1011 KB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||
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| 公開日 | 2025-02-01 | |||||||||
| タイトル | ||||||||||
| タイトル | Magnetization Reversal via Domain Wall Motion in Vertical High-Aspect-Ratio Nanopillar with Two Magnetic Junctions | |||||||||
| 言語 | en | |||||||||
| 言語 | ||||||||||
| 言語 | eng | |||||||||
| 資源タイプ | ||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||
| 資源タイプ | journal article | |||||||||
| アクセス権 | ||||||||||
| アクセス権 | open access | |||||||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||||||
| 著者 |
本多, 周太
× 本多, 周太
WEKO
27935
× 園部, 義明 |
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| 概要 | ||||||||||
| 内容記述タイプ | Other | |||||||||
| 内容記述 | A vertical ferromagnetic (FM) nanopillar can be used as magnetic memory owing to characteristics such as its high storage capacity and high thermal stability. The perpendicular shape anisotropy (PSA) of the pillar enables its magnetization direction to be stabilized. A pillar with a high aspect ratio exhibits both strong PSA and magnetization with high thermal stability. Reversing the magnetization direction of such a pillar using the current flowing through it is a significant challenge in spintronics. However, spin injection from another FM layer alone cannot reverse the magnetization of pillars of which the length exceeds 100 nm. This motivated us to propose a magnetic junction consisting of a high-aspect-ratio FM nanopillar with two thin FM layers. Using micromagnetic simulation, we demonstrate the magnetization reversal of a 150-nm-long pillar with a diameter of 15 nm. The simulation revealed that the magnetization of the pillar reverses because of the spin transfer torque induced by the spin injection from the two thin FM layers and the spin-polarized current flowing in the pillar in the longitudinal direction. During the magnetization reversal process, a domain wall (DW) first forms at one end of the pillar due to the spin injection. Then, driven by the spin-polarized current, the DW moves to the other end of the pillar, and the magnetization is reversed. The magnetization direction of the pillar, controlled by changing the direction of the current flowing through the pillar, can be evaluated from the respective magnetoresistance values of the two magnetic junctions. Alternatively, by pinning the DW in the pillar, a three-value magnetic memory can be developed. In addition, multi-bit and analog memories can be developed by controlling the pinning position of the DW. The high-aspect-ratio pillar-writing scheme is foreseen to pave the way for the practical development of next-generation spintronic devices. | |||||||||
| 言語 | en | |||||||||
| 内容記述 | ||||||||||
| 内容記述タイプ | Other | |||||||||
| 内容記述 | KAKENHI (grant numbers : 20H02607 and 23K17765) | |||||||||
| 言語 | en | |||||||||
| 書誌情報 |
en : Journal of Physics D : Applied Physics 巻 57, 号 17, p. 1-10, 発行日 2024-02-01 |
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| ISSN | ||||||||||
| 収録物識別子タイプ | PISSN | |||||||||
| 収録物識別子 | 00223727 | |||||||||
| ISBN | ||||||||||
| 識別子タイプ | EISSN | |||||||||
| 関連識別子 | 13616463 | |||||||||
| 書誌レコードID | ||||||||||
| 収録物識別子タイプ | NCID | |||||||||
| 収録物識別子 | AA00704905 | |||||||||
| DOI | ||||||||||
| 関連タイプ | isVersionOf | |||||||||
| 識別子タイプ | DOI | |||||||||
| 関連識別子 | 10.1088/1361-6463/ad2120 | |||||||||
| 権利 | ||||||||||
| 言語 | en | |||||||||
| 権利情報 | This is the Accepted Manuscript version of an article accepted for publication in Journal of Physics D: Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at 10.1088/1361-6463/ad2120. | |||||||||
| 著者版フラグ | ||||||||||
| 出版タイプ | AM | |||||||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||
| 出版者 | ||||||||||
| 出版者 | IOP Publishing | |||||||||
| 言語 | en | |||||||||
| キーワード | ||||||||||
| 言語 | en | |||||||||
| 主題Scheme | Other | |||||||||
| 主題 | multi-value memory | |||||||||
| キーワード | ||||||||||
| 言語 | en | |||||||||
| 主題Scheme | Other | |||||||||
| 主題 | PSA-MRAM | |||||||||
| キーワード | ||||||||||
| 言語 | en | |||||||||
| 主題Scheme | Other | |||||||||
| 主題 | domain wall motion | |||||||||
| キーワード | ||||||||||
| 言語 | en | |||||||||
| 主題Scheme | Other | |||||||||
| 主題 | LLG equation | |||||||||
| キーワード | ||||||||||
| 言語 | en | |||||||||
| 主題Scheme | Other | |||||||||
| 主題 | Multibit-MRAM | |||||||||
| キーワード | ||||||||||
| 言語 | en | |||||||||
| 主題Scheme | Other | |||||||||
| 主題 | magnetization reversal | |||||||||
| キーワード | ||||||||||
| 言語 | ja | |||||||||
| 主題Scheme | Other | |||||||||
| 主題 | 関西大学 | |||||||||
| キーワード | ||||||||||
| 言語 | en | |||||||||
| 主題Scheme | Other | |||||||||
| 主題 | Kansai University | |||||||||
