{"created":"2023-05-15T12:21:01.665943+00:00","id":11794,"links":{},"metadata":{"_buckets":{"deposit":"942e80e6-0990-4806-a92f-6058471ac4ce"},"_deposit":{"created_by":1,"id":"11794","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"11794"},"status":"published"},"_oai":{"id":"oai:kansai-u.repo.nii.ac.jp:00011794","sets":["528:1588:1617:1627"]},"author_link":["28237","28240","28235","28241","28236","28238","28234","28239"],"item_10_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2007-03-20","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"38","bibliographicPageStart":"29","bibliographicVolumeNumber":"49","bibliographic_titles":[{"bibliographic_title":"関西大学工学研究報告 = Technology reports of the Kansai University"}]}]},"item_10_description_4":{"attribute_name":"概要","attribute_value_mlt":[{"subitem_description":"The feasibility of using the SOI-MOSFET as a quasi-diode to replace the Schottky-barrier diode (SBD) in the Schenkel circuit is examined by experiments and simulations. Unlike the SBD, the reverse-biased current of the SOI-MOSFET-based quasi-diode is much lower than its forward-biased current (I_F). The driving current of the quasi-diode (I_F) is increased by the excellent subthreshold swing value (S) of the SOI MOSFET ; the trade-off between boost-up efficiency (η) and I_F should be taken into account. An a. c. analysis indicates that the channel-doping level of the quasi-diode should be optimized to suppress the floating-body effect for RF applications.","subitem_description_type":"Other"}]},"item_10_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"28238","nameIdentifierScheme":"WEKO"}],"names":[{"name":"田村, 拓太"}]},{"nameIdentifiers":[{"nameIdentifier":"28239","nameIdentifierScheme":"WEKO"}],"names":[{"name":"名村, 重男"}]},{"nameIdentifiers":[{"nameIdentifier":"28240","nameIdentifierScheme":"WEKO"}],"names":[{"name":"大村, 泰久"}]},{"nameIdentifiers":[{"nameIdentifier":"28241","nameIdentifierScheme":"WEKO"}],"names":[{"name":"飯田, 幸雄"}]}]},"item_10_publisher_34":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"関西大学工学部"}]},"item_10_source_id_10":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN00046916","subitem_source_identifier_type":"NCID"}]},"item_10_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"04532198","subitem_source_identifier_type":"ISSN"}]},"item_10_version_type_17":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Tamura, Takuta"}],"nameIdentifiers":[{"nameIdentifier":"28234","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Namura, Shigeo"}],"nameIdentifiers":[{"nameIdentifier":"28235","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Omura, Yasuhisa"}],"nameIdentifiers":[{"nameIdentifier":"28236","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"20298839","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://nrid.nii.ac.jp/ja/nrid/1000020298839"}]},{"creatorNames":[{"creatorName":"Iida, Yukio"}],"nameIdentifiers":[{"nameIdentifier":"28237","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2019-05-23"}],"displaytype":"detail","filename":"KU-1100-20070300-02.pdf","filesize":[{"value":"611.8 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KU-1100-20070300-02.pdf","url":"https://kansai-u.repo.nii.ac.jp/record/11794/files/KU-1100-20070300-02.pdf"},"version_id":"523c61ca-7b05-4e37-b6aa-89c4bc071233"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"関西大学","subitem_subject_scheme":"Other"},{"subitem_subject":"Kansai University","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Performance Evaluation of Fully-Depleted SOI MOSFET-Based Diodes Applied to Schenkel Circuit for RF-ID Chips","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Performance Evaluation of Fully-Depleted SOI MOSFET-Based Diodes Applied to Schenkel Circuit for RF-ID Chips"}]},"item_type_id":"10","owner":"1","path":["1627"],"pubdate":{"attribute_name":"公開日","attribute_value":"2011-12-08"},"publish_date":"2011-12-08","publish_status":"0","recid":"11794","relation_version_is_last":true,"title":["Performance Evaluation of Fully-Depleted SOI MOSFET-Based Diodes Applied to Schenkel Circuit for RF-ID Chips"],"weko_creator_id":"1","weko_shared_id":1},"updated":"2023-05-15T14:52:35.023761+00:00"}