{"created":"2023-05-15T12:21:01.622968+00:00","id":11793,"links":{},"metadata":{"_buckets":{"deposit":"3b0c0c7e-47e1-40ac-a390-70f21e3f5117"},"_deposit":{"created_by":1,"id":"11793","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"11793"},"status":"published"},"_oai":{"id":"oai:kansai-u.repo.nii.ac.jp:00011793","sets":["528:1588:1617:1627"]},"author_link":["52875","28231","28232","28233"],"item_10_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2007-03-20","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"27","bibliographicPageStart":"19","bibliographicVolumeNumber":"49","bibliographic_titles":[{"bibliographic_title":"関西大学工学研究報告 = Technology reports of the Kansai University"}]}]},"item_10_description_4":{"attribute_name":"概要","attribute_value_mlt":[{"subitem_description":"This paper proposes a design guideline for the aspect ratio (Rh/w) of the fin height (h) to fin width (w) of 3-D devices (FinFET like double-gate (DG) FET and triple-gate (TG)-FET) that is based on device simulations. Since any change in the aspect ratio yields the trade-off between drivability and short-channel effects, it is shown that optimization of the aspect ratio is essential in designing 3-D architectural devices. We found that the increase in w seems to bring a high drive current (Ion) and an enhancement of Ion, but that a large w is undesirable for shorter channel length (L) devices because the drain-induced barrier lowering (DIBL) effect is enhanced ; TG-FET is superior to FinFET in terms of both drivability and short-channel effects. In addition, we found that the guideline of w<L/3 is essential for suppression of the short-channel effects of TG-FET's. We conclude, therefore, that a narrow, high fin is best for high performance TG-FET's that offer suppressed short-channel effects.","subitem_description_type":"Other"}]},"item_10_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"28232","nameIdentifierScheme":"WEKO"}],"names":[{"name":"小西, 秀貴"}]},{"nameIdentifiers":[{"nameIdentifier":"28233","nameIdentifierScheme":"WEKO"}],"names":[{"name":"大村, 泰久"}]}]},"item_10_publisher_34":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"関西大学工学部"}]},"item_10_source_id_10":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN00046916","subitem_source_identifier_type":"NCID"}]},"item_10_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"04532198","subitem_source_identifier_type":"ISSN"}]},"item_10_version_type_17":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Konishi, Hideki"}],"nameIdentifiers":[{"nameIdentifier":"52875","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Omura, Yasuhisa"}],"nameIdentifiers":[{"nameIdentifier":"28231","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"20298839","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://nrid.nii.ac.jp/ja/nrid/1000020298839"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2019-05-23"}],"displaytype":"detail","filename":"KU-1100-20070320-03.pdf","filesize":[{"value":"817.6 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KU-1100-20070320-03.pdf","url":"https://kansai-u.repo.nii.ac.jp/record/11793/files/KU-1100-20070320-03.pdf"},"version_id":"696ddb25-d976-43f0-bf16-c9af54e86b21"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"関西大学","subitem_subject_scheme":"Other"},{"subitem_subject":"Kansai University","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Impacts of Geometrical Aspect Ratio on Drivability and Short-Channel-Effects of Multi-Gate SOI MOSFET's","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Impacts of Geometrical Aspect Ratio on Drivability and Short-Channel-Effects of Multi-Gate SOI MOSFET's"}]},"item_type_id":"10","owner":"1","path":["1627"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-02-22"},"publish_date":"2018-02-22","publish_status":"0","recid":"11793","relation_version_is_last":true,"title":["Impacts of Geometrical Aspect Ratio on Drivability and Short-Channel-Effects of Multi-Gate SOI MOSFET's"],"weko_creator_id":"1","weko_shared_id":1},"updated":"2023-05-15T14:52:35.850894+00:00"}