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Impacts of Geometrical Aspect Ratio on Drivability and Short-Channel-Effects of Multi-Gate SOI MOSFET's
http://hdl.handle.net/10112/12448
http://hdl.handle.net/10112/1244853a627d0-c104-468c-8dce-5233f2955e33
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
KU-1100-20070320-03.pdf (817.6 kB)
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| Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2018-02-22 | |||||
| タイトル | ||||||
| タイトル | Impacts of Geometrical Aspect Ratio on Drivability and Short-Channel-Effects of Multi-Gate SOI MOSFET's | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | departmental bulletin paper | |||||
| 著者 |
Konishi, Hideki
× Konishi, Hideki× Omura, Yasuhisa |
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| 著者別名 | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 28232 | |||||
| 姓名 | 小西, 秀貴 | |||||
| 著者別名 | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 28233 | |||||
| 姓名 | 大村, 泰久 | |||||
| 概要 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | This paper proposes a design guideline for the aspect ratio (Rh/w) of the fin height (h) to fin width (w) of 3-D devices (FinFET like double-gate (DG) FET and triple-gate (TG)-FET) that is based on device simulations. Since any change in the aspect ratio yields the trade-off between drivability and short-channel effects, it is shown that optimization of the aspect ratio is essential in designing 3-D architectural devices. We found that the increase in w seems to bring a high drive current (Ion) and an enhancement of Ion, but that a large w is undesirable for shorter channel length (L) devices because the drain-induced barrier lowering (DIBL) effect is enhanced ; TG-FET is superior to FinFET in terms of both drivability and short-channel effects. In addition, we found that the guideline of w<L/3 is essential for suppression of the short-channel effects of TG-FET's. We conclude, therefore, that a narrow, high fin is best for high performance TG-FET's that offer suppressed short-channel effects. | |||||
| 書誌情報 |
関西大学工学研究報告 = Technology reports of the Kansai University 巻 49, p. 19-27, 発行日 2007-03-20 |
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| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 04532198 | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AN00046916 | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| 出版者 | ||||||
| 出版者 | 関西大学工学部 | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | 関西大学 | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Kansai University | |||||
