{"created":"2023-05-15T12:20:55.616902+00:00","id":11656,"links":{},"metadata":{"_buckets":{"deposit":"a3e3ae27-af75-4dff-b8e0-55ac092409f7"},"_deposit":{"created_by":1,"id":"11656","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"11656"},"status":"published"},"_oai":{"id":"oai:kansai-u.repo.nii.ac.jp:00011656","sets":["528:1588:1604:1608"]},"author_link":["27778","27777"],"item_10_alternative_title_20":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"Deposition and Microfabrication of Gd-doped CeO2 for Micro SOFC Operating at Low Temperature"}]},"item_10_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2010-11-10","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"46","bibliographicPageStart":"43","bibliographicVolumeNumber":"17","bibliographic_titles":[{"bibliographic_title":"理工学と技術 : 関西大学理工学会誌 = Engineering & technology"}]}]},"item_10_description_4":{"attribute_name":"概要","attribute_value_mlt":[{"subitem_description":"携帯機器に搭載できるSOFCの構造として極薄のGd 添加CeO2 (GDC) 膜を自己支持にし、そこに局所加熱のためにマイクロヒータを配した構造を提案し\nた。これを実現するためにGDC膜の残留応力を成膜中の酸素分圧によって制御する方法を試み、-160\nMPaの低応力膜を持た。GDC膜のエッチング耐性を調査し、その結果に基づいて作製プロセスを設計し、提案したマイクロSOFCの基本構造を作製した。作製したGDC自己支持膜のイオン導電率は報告されているバルクGDCの値より低いが400℃以下の低温ではバルクYSZよりも高い値を示しており、GDC自己支持膜を用いてマイクロSOFCの低温化が期待できる。","subitem_description_type":"Other"}]},"item_10_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"トピックス","subitem_description_type":"Other"}]},"item_10_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"27778","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Takahashi, Tomokazu"}]}]},"item_10_publisher_34":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"関西大学理工学会"}]},"item_10_source_id_10":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA12311681","subitem_source_identifier_type":"NCID"}]},"item_10_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"18830021","subitem_source_identifier_type":"ISSN"}]},"item_10_version_type_17":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"高橋, 智一"}],"nameIdentifiers":[{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2019-05-23"}],"displaytype":"detail","filename":"KU-1100RKG-20101110-08.pdf","filesize":[{"value":"1.2 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KU-1100RKG-20101110-08.pdf","url":"https://kansai-u.repo.nii.ac.jp/record/11656/files/KU-1100RKG-20101110-08.pdf"},"version_id":"b0fabee2-2b8d-429e-9c21-c1db91a6b9d5"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"中低温動作マイクロSOFCのためのGd添加CeO2の堆積と微細加工","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"中低温動作マイクロSOFCのためのGd添加CeO2の堆積と微細加工"}]},"item_type_id":"10","owner":"1","path":["1608"],"pubdate":{"attribute_name":"公開日","attribute_value":"2011-03-04"},"publish_date":"2011-03-04","publish_status":"0","recid":"11656","relation_version_is_last":true,"title":["中低温動作マイクロSOFCのためのGd添加CeO2の堆積と微細加工"],"weko_creator_id":"1","weko_shared_id":1},"updated":"2023-05-15T15:40:45.506403+00:00"}