@article{oai:kansai-u.repo.nii.ac.jp:00011593,
 author = {西本, 明生 and 安藤, 正昭 and 高橋, 誠 and 有年, 雅敏 and 赤松, 勝也 and 池内, 建二},
 issue = {10},
 journal = {日本金属学会誌},
 month = {Oct},
 note = {In order to discuss the effect of a Ti intermediate layer on the strength of the friction-bonded joint of silicon carbide to copper, the microstructure of the joint interface was observed with a TEM. Specimens to be bonded were rods of pressureless-sintered SiC and oxygen-free copper. TEM observations revealed that reaction layers less than a few 10 nm thick were formed, which were identified as Cu, TiC, and Ti5Si3 on the basis of SAD pattern and EDX analyses. The Ti5Si3 layer was partly formed as discrete islands on the Cu side of the TiC layer. The Cu layer was located between SiC matrix and TiC layer, forming TiC/Cu double layers. The TiC/Cu double layers presented preferred orientation relationships with SiC, which can be expressed by the following equations.
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On the other hand, the Ti5Si3 layer showed no preferred orientation relationship with SiC or Cu. In addition to these reaction layers, amorphous layers of Si oxide ∼100 nm thick were occasionally observed at the SiC/Cu interface. In the Cu-Ti mixing region adjacent to the joint interface, Cu4Ti particles ∼100 nm size in diameter were observed.},
 pages = {538--546},
 title = {Tiインサート金属を用いた炭化ケイ素と無酸素銅との摩擦圧接継手の界面構造},
 volume = {67},
 year = {2003}
}