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Friction Bonding of Silicon Carbide to Oxygen-Free Copper with an Intermediate Layer of Reactive Metal
http://hdl.handle.net/10112/10476
http://hdl.handle.net/10112/104763fc808fd-436d-4518-9374-d54165f57b0e
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
KU-1100-20001220-00.pdf (4.3 MB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2016-10-24 | |||||
| タイトル | ||||||
| タイトル | Friction Bonding of Silicon Carbide to Oxygen-Free Copper with an Intermediate Layer of Reactive Metal | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| 著者 |
Nishimoto, Akio
× Nishimoto, Akio× Ando, Masaaki× Aritoshi, Masatoshi× Takahashi, Makoto× Ikeuchi, Kenji |
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| 著者別名 | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 27154 | |||||
| 姓名 | 西本, 明生 | |||||
| 著者別名 | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 27155 | |||||
| 姓名 | 安藤, 正昭 | |||||
| 著者別名 | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 27156 | |||||
| 姓名 | 有年, 雅敏 | |||||
| 著者別名 | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 27157 | |||||
| 姓名 | 高橋, 誠 | |||||
| 著者別名 | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 27158 | |||||
| 姓名 | 池内, 建二 | |||||
| 概要 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | Intermediate layers of various metals ranging from reactive metals to noble metals have been applied to friction bonding of SiC (pressureless-sintered silicon carbide) to Cu (oxygen-free copper), and their influences on the bond strength and microstructures of the joint have been systematically investigated by means of TEM observations. When a thin foil of reactive metal, Al, Ti, Zr, or Nb, was applied as the intermediate layer, the bond strength of SiC to Cu was improved considerably. In contrast, when an intermediate layer of Fe, Ni, or Ag was applied, the SiC specimen separated from the Cu specimen immediately after the bonding operation without the application of external load, similar to the case of bonding without an intermediate layer. During friction bonding with an intermediate layer of reactive metal, the intermediate layer was mechanically mixed with Cu to form a very complicated microstructure extending over a region as wide as a few 100 μm. TEM observations have revealed that very thin reaction layers between the SiC and reactive metals were formed. When the Ti intermediate layer was applied, a TiC layer 10–30 nm thick was formed over almost the entire area along the interface, and between this layer and the SiC matrix a very thin layer of a Cu solid solution was detected. On the other side of the TiC layer, a Ti5Si3 layer ∼100 nm thick was partially observed. When the Nb or Zr intermediate layer was applied, a very thin interfacial layer, in which Nb or Zr was significantly concentrated, was observed in addition to the reaction layers of Nb5Si3, NbC, and ZrC. These interfacial layers can be characterized by their much smaller thickness and finer grain size than those observed in diffusion-bonded and brazed joints. Apart from the layers mentioned above, amorphous silicon oxide layers were occasionally observed, suggesting that the reactive metal enhanced the removal of the oxide film on the SiC surface. | |||||
| 書誌情報 |
Materials Transactions, JIM 巻 41, 号 12, p. 1636-1645, 発行日 2000-12-20 |
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| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 09161821 | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA10699969 | |||||
| DOI | ||||||
| 関連タイプ | isIdenticalTo | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.2320/matertrans1989.41.1636 | |||||
| 権利 | ||||||
| 権利情報 | (C) 2000 The Japan Institute of Metals | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| 出版者 | ||||||
| 出版者 | Japan Institute of Metals | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | セラミックス | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | 反応層 | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | 接合強さ | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | 活性金属 | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | セラミックス/金属界面 | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | 銅 | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | 炭化ケイ素 | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | 摩擦圧接 | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | silicon carbide | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | copper | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | reactive metal | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | friction bonding | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | reaction layer | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | ceramic/metal interface | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | transmission electron microscopy | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | bond strength | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | surface modification | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | 関西大学 | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Kansai University | |||||
| 出版者（他言語） | ||||||
| 値 | 日本金属学会 | |||||
