@article{oai:kansai-u.repo.nii.ac.jp:00011535,
 author = {奥野, 昌二 and 下前, 幸康 and 小原, 一真 and 藤原, 博樹 and 大山, 淳 and 大本, 将義 and 和田, 芳直 and 荒川, 隆一},
 issue = {3},
 journal = {Journal of the Mass Spectrometry Society of Japan},
 month = {},
 note = {Desorption/ionization on porous silicon (DIOS) is a novel matrix-free variant of laser desorption/ionization (LDI) techniques for mass spectrometry. The DIOS chips are produced by electrochemical etching of silicon wafers under light exposure. In the present report, the optimal conditions, regarding resistivity of silicon wafer, etching current density and etching time, for making DIOS chip with better ionization performance are described. In addition, the DIOS mass spectra of various synthetic polymers including polyethyleneglycol, nonylphenolpolyethoxylate, nonylphenolpolyethoxylatesulfate, polymethylmethacrylate are compared with the matrix-assisted LDI mass spectra.},
 pages = {142--148},
 title = {DIOS法を利用した合成高分子の質量分析 : DIOSチップ作製の最適化},
 volume = {52},
 year = {2004}
}