{"created":"2023-05-15T12:20:35.383451+00:00","id":11207,"links":{},"metadata":{"_buckets":{"deposit":"5fe7efdc-9a7b-47cf-8ea5-fb5dba989779"},"_deposit":{"created_by":1,"id":"11207","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"11207"},"status":"published"},"_oai":{"id":"oai:kansai-u.repo.nii.ac.jp:00011207","sets":["528:1588:1589:1591"]},"author_link":["24723","24724"],"item_9_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2011-07","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"8","bibliographicPageStart":"1","bibliographicVolumeNumber":"2011","bibliographic_titles":[{}]}]},"item_9_description_4":{"attribute_name":"概要","attribute_value_mlt":[{"subitem_description":"We propose a high-temperature-operation (HTOT) SOI MOSFET and show preliminary simulation results of its characteristics.\nIt is demonstrated that HTOT SOI MOSFET operates safely at 700 K with no thermal instability because of its expanded effective\nbandgap. It is shown that its threshold voltage is higher than that of the conventional SOI MOSFET because its local thin Si regions offer an expanded effective band gap. It is shown that HTOT SOI MOSFET with 1-nm-thick local-thin Si regions is almost insensitive to temperature for T < 700 K (427 C). This confirms that HTOT SOI MOSFET is a promising device for future hightemperature applications.","subitem_description_type":"Other"}]},"item_9_description_6":{"attribute_name":"引用","attribute_value_mlt":[{"subitem_description":"Active and Passive Electronic Components","subitem_description_type":"Other"}]},"item_9_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"24724","nameIdentifierScheme":"WEKO"}],"names":[{"name":"大村, 泰久"}]}]},"item_9_publisher_34":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Hindawi Publishing Corporation"}]},"item_9_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1155/2011/850481","subitem_relation_type_select":"DOI"}}]},"item_9_version_type_17":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Omura, Yasuhisa"}],"nameIdentifiers":[{"nameIdentifier":"24723","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"20298839","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://nrid.nii.ac.jp/ja/nrid/1000020298839"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2019-05-23"}],"displaytype":"detail","filename":"KU-1100-20110711-02.pdf","filesize":[{"value":"1.3 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KU-1100-20110711-02.pdf","url":"https://kansai-u.repo.nii.ac.jp/record/11207/files/KU-1100-20110711-02.pdf"},"version_id":"a2c7a200-dc7d-4a95-8d00-78b8fdf8731f"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance Evaluation","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance Evaluation"}]},"item_type_id":"9","owner":"1","path":["1591"],"pubdate":{"attribute_name":"公開日","attribute_value":"2011-11-17"},"publish_date":"2011-11-17","publish_status":"0","recid":"11207","relation_version_is_last":true,"title":["Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance Evaluation"],"weko_creator_id":"1","weko_shared_id":1},"updated":"2023-05-15T14:52:15.617727+00:00"}