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Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance Evaluation
http://hdl.handle.net/10112/5562
http://hdl.handle.net/10112/55626984073f-df27-481a-b2d2-689956f5ad34
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
KU-1100-20110711-02.pdf (1.3 MB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2011-11-17 | |||||
| タイトル | ||||||
| タイトル | Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance Evaluation | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| 著者 |
Omura, Yasuhisa
× Omura, Yasuhisa |
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| 著者別名 | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 24724 | |||||
| 姓名 | 大村, 泰久 | |||||
| 概要 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | We propose a high-temperature-operation (HTOT) SOI MOSFET and show preliminary simulation results of its characteristics. It is demonstrated that HTOT SOI MOSFET operates safely at 700 K with no thermal instability because of its expanded effective bandgap. It is shown that its threshold voltage is higher than that of the conventional SOI MOSFET because its local thin Si regions offer an expanded effective band gap. It is shown that HTOT SOI MOSFET with 1-nm-thick local-thin Si regions is almost insensitive to temperature for T < 700 K (427 C). This confirms that HTOT SOI MOSFET is a promising device for future hightemperature applications. |
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| 書誌情報 | 巻 2011, p. 1-8, 発行日 2011-07 | |||||
| DOI | ||||||
| 関連タイプ | isIdenticalTo | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1155/2011/850481 | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| 出版者 | ||||||
| 出版者 | Hindawi Publishing Corporation | |||||
| 引用 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | Active and Passive Electronic Components | |||||
