The synthesized noria-AD offered 40 nm resolution resist pattern with LWR = 9.5 nm in the case of EB exposure tool and a clear 26 nm resolution pattern with LWR = 8.3 nm by means of EUV exposure tool. These results indicate that the present poly(THPE-co-BVOC) would have higher potential to offer higher resolution pattern using EUV lithography system.
雑誌名
Journal of Photopolymer Science and Technology
巻
28
号
1
ページ
125 - 129
発行年
2015-06-24
ISSN
09149244
書誌レコードID
AA11576862
DOI
10.2494/photopolymer.28.125
権利
(C) 2015 SPST
本文はフォトポリマー学会の許諾を得て作成しています。
著者版フラグ
publisher
出版者
The Society of Photopolymer Science and Technology